Hydrogen Migration in Single Crystalline ZnO

Single-crystalline ZnO sheet Source-Gated Transistors

Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the pres...

Excitonic fine structure and recombination dynamics in single-crystalline ZnO

Implantation site of rare earths in single-crystalline ZnO

The lattice location of rare earth Er in single-crystalline hexagonal ZnO was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope Tm at doses of 1.3−2.8×10 cm and annealing up to 900°C, the angular distribution of conversion electrons emitted by the radioactive isotope Er was measured by a position-sensitive electron det...

Nonvolatile resistive switching in single crystalline ZnO nanowires.

We demonstrate nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages. Unlike the mechanism of continuous metal filament formation along grain boundaries in polycrystalline films, the resistive switching in single crystalline ZnO nanowires is speculated to be induced by the formation of a metal island chain on the nanowire surface....

Formation of single crystalline ZnO nanotubes without catalysts and templates